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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
www.vishay.com
PRODUCT SUMMARY
Vishay Siliconix
Power MOSFET
FEATURES
? Surface Mountable (Order As IRFR9020,
V DS (V)
- 50
SiHFR9020)
R DS(on) ( ? )
Q g (Max.) (nC)
V GS = - 10 V
14
0.28
? Straight Lead Option (Order As IRFU9020,
SiHFU9020)
? Repetitive Avalanche Ratings
Q gs (nC)
Q gd (nC)
Configuration
6.5
6.5
Single
S
? Dynamic dV/dt Rating
? Simple Drive Requirements
? Ease of Paralleling
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt.
G
S
G
D S
D
The power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
P-Channel MOSFET
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of power
MOSFET’s to high volume applications where PC board
surface mounting is desirable. The surface mount option
IRFR9020, SiHFR9020 is provided on 16mm tape. The
straight lead option IRFU9020, SiHFU9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252)
SiHFR9020-GE3
IRFR9020PbF
SiHFR9020-E3
DPAK (TO-252)
SiHFR9020TR-GE3 a
IRFR9020TRPbF a
SiHFR9020T-E3 a
DPAK (TO-252)
SiHFR9020TRL-GE3 a
IRFR9020TRLPbF a
SiHFR9020TL-E3 a
IPAK (TO-251)
SiHFU9020-GE3
IRFU9020PbF
SiHFU9020-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
- 50
± 20
UNIT
V
Continuous Drain Current
V GS at - 10 V
T C = 25 °C
T C = 100 °C
I D
- 9.9
- 6.3
A
Pulsed Drain Current a
I DM
- 40
Linear Derating Factor
0.33
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
250
- 9.9
4.2
mJ
A
mJ
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
T C = 25 °C
for 10 s
P D
dV/dt
T J , T stg
42
5.8
- 55 to + 150
300
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).
b. V DD = - 25 V, Starting T J = 25 °C, L = 5.1 mH, R g = 25 ? , Peak I L = - 9.9 A
c. I SD ? - 9.9 A, dI/dt ? -120 A/μs, V DD ? 40 V, T J ? 150 °C.
d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0169-Rev. D, 04-Feb-13
1
Document Number: 90350
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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